Implementation Workshop: High Performance Work Organizations

Since the rise of the industrial revolution, there are few challenges that compare in scale and scope with the challenge of implementing lean principles in order to achieve high performance work systems. This report summarize key insights and learning by representatives from a cross section of organizations who are on this journey. Specifically, we report on findings from the first Lean Aircraft Initiative (LAI) Implementation Workshop, which was held on February 5-6, 1997.

Implementation Workshop: High Performance Work Organizations

Since the rise of the industrial revolution, there are few challenges that compare in scale and scope with the challenge of implementing lean principles in order to achieve high performance work systems. This report summarize key insights and learning by representatives from a cross section of organizations who are on this journey. Specifically, we report on findings from the first Lean Aircraft Initiative (LAI) Implementation Workshop, which was held on February 5-6, 1997. The report is not a “cookbook” or a “how to” manual. Rather, it is a summary of the first phase in a learning process. It is designed to codify lessons learning, facilitate diffusion among people not at the session, and set the stage for further learning about implementation.

Multi-Scale Vector-Ridge-Detection for Perceptual Organization Without Edges

We present a novel ridge detector that finds ridges on vector fields. It is designed to automatically find the right scale of a ridge even in the presence of noise, multiple steps and narrow valleys. One of the key features of such ridge detector is that it has a zero response at discontinuities. The ridge detector can be applied to scalar and vector quantities such as color. We also present a parallel perceptual organization scheme based on such ridge detector that works without edges; in addition to perceptual groups, the scheme computes potential focus of attention points at which to direct future processing. The relation to human perception and several theoretical findings supporting the scheme are presented. We also show results of a Connection Machine implementation of the scheme for perceptual organization (without edges) using color.

Robust, High-Speed Network Design for Large-Scale Multiprocessing

As multiprocessor system size scales upward, two important aspects of multiprocessor systems will generally get worse rather than better: (1) interprocessor communication latency will increase and (2) the probability that some component in the system will fail will increase. These problems can prevent us from realizing the potential benefits of large-scale multiprocessing. In this report we consider the problem of designing networks which simultaneously minimize communication latency while maximizing fault tolerance. Using a synergy of techniques including connection topologies, routing protocols, signalling techniques, and packaging technologies we assemble integrated, system-level solutions to this network design problem.

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.